Simulations showed that by further optimizing the structure of the ML-FinFETs, drain-induced-barrier-lowering (DIBL) can be lowered to 5 mV/V. The best electrical performances of such ML-FinFETs were obtained to show on/off ratio reaching 10 7, sub-threshold swing of about 300 mV/dec, and mobilities at the order of a few cm 2V -1s -1. Gate electrodes can also be made of a carbon nanotube thin film. The researchers designed a wet-sprayed chemical vapor deposition (CVD) method to universally grow monolayers of transition metal dichalcogenides (ML-TMDCs, such as MoS 2 and WS 2) on step-shaped templates with height at the order of 300 nm.Īfter a dedicated work flow of multiple-step etching and nano fabrication processes, vertically standing single layer MoS 2 channels are successfully wrapped with dielectric and gate electrodes, with source and drain electrodes contacting the 0.6 nm fin channel. In a new study published in Nature Communications, the researchers from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences and France aimed at replacing the conventional Si-based fin with 2-D single atomic layer in the FinFET architecture. In recent years, novel materials such as carbon nanotubes and two dimensional (2-D) materials have been widely studied for the implementation of nano-scaled transistors. It is therefore of great importance to seek new candidates of semiconducting materials. Due to the limitation of nano-fabrication precision, it is now extremely challenging to shrink further the size of transistors on an integrated circuit. In the past decades, microelectronics has developed in a rapid pace following the Moore's Law, with the number of transistors per area increased bi-yearly.
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